FDMC610P

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The FDMC610P from onsemi is a MOSFET with Continous Drain Current -80 A, Drain Source Resistance 3.9 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 V. Tags: Surface Mount. More details for FDMC610P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMC610P
  • Manufacturer
    onsemi
  • Description
    -8 to 8 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -80 A
  • Drain Source Resistance
    3.9 milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 V
  • Gate Charge
    71 to 99 nC
  • Power Dissipation
    48 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    High side switching

Technical Documents