FDMC86012

Note : Your request will be directed to onsemi.

The FDMC86012 from onsemi is a MOSFET with Continous Drain Current 88 A, Drain Source Resistance 2.7 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1.5 V. Tags: Surface Mount. More details for FDMC86012 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMC86012
  • Manufacturer
    onsemi
  • Description
    -12 to 12 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    88 A
  • Drain Source Resistance
    2.7 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    1.5 V
  • Gate Charge
    16 to 38 nC
  • Power Dissipation
    54 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Synchronics rectifier

Technical Documents

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