FDMC86261P

Note : Your request will be directed to onsemi.

The FDMC86261P from onsemi is a MOSFET with Continous Drain Current -9 A, Drain Source Resistance 160 milliohm, Drain Source Breakdown Voltage -150 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -4 V. Tags: Surface Mount. More details for FDMC86261P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMC86261P
  • Manufacturer
    onsemi
  • Description
    -25 to 25 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9 A
  • Drain Source Resistance
    160 milliohm
  • Drain Source Breakdown Voltage
    -150 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -4 V
  • Gate Charge
    11 to 24 nC
  • Power Dissipation
    40 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-8
  • Applications
    Active clamp switch, Load switch

Technical Documents

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