The FDMS10C4D2N from onsemi is a MOSFET with Continous Drain Current 124 A, Drain Source Resistance 4.2 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDMS10C4D2N can be seen below.