FDMS1D2N03DSD

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The FDMS1D2N03DSD from onsemi is a MOSFET with Continous Drain Current 70 to 164 A, Drain Source Resistance 0.97 to 3.25 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 16 V, Gate Source Threshold Voltage 2.5 to 3 V. Tags: Surface Mount. More details for FDMS1D2N03DSD can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMS1D2N03DSD
  • Manufacturer
    onsemi
  • Description
    -12 to 16 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    70 to 164 A
  • Drain Source Resistance
    0.97 to 3.25 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 16 V
  • Gate Source Threshold Voltage
    2.5 to 3 V
  • Gate Charge
    11 to 117 nC
  • Power Dissipation
    26 to 42 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Computing, Communications, General Purpose Point of Load

Technical Documents