FDMS86310

Note : Your request will be directed to onsemi.

The FDMS86310 from onsemi is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 4.8 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4.5 V. Tags: Surface Mount. More details for FDMS86310 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDMS86310
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    4.8 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4.5 V
  • Gate Charge
    55 to 95 nC
  • Power Dissipation
    96 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Primary MOSFET in DC - DC Converters, Secondary Synchronous Rectifier, Load Switch

Technical Documents