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FDMS86350ET80

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The FDMS86350ET80 from onsemi is a MOSFET with Continous Drain Current 198 A, Drain Source Resistance 2.4 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4.5 V. Tags: Surface Mount. More details for FDMS86350ET80 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMS86350ET80
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    198 A
  • Drain Source Resistance
    2.4 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4.5 V
  • Gate Charge
    90 to 155 nC
  • Power Dissipation
    187 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Primary MOSFET, Synchronous Rectifier Load Switch, Motor Control Switch

Technical Documents
View details on the manufacturer's website
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