FDMT1D3N08B

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The FDMT1D3N08B from onsemi is a MOSFET with Continous Drain Current 164 A, Drain Source Resistance 1.35 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDMT1D3N08B can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMT1D3N08B
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    164 A
  • Drain Source Resistance
    1.35 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    152 to 260 nC
  • Power Dissipation
    178 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    OringFET / Load Switching, Synchronous Rectification, DC-DC Conversion

Technical Documents