FDMT1D3N08B

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The FDMT1D3N08B from onsemi is a MOSFET with Continous Drain Current 164 A, Drain Source Resistance 1.35 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDMT1D3N08B can be seen below.

Product Specifications

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Product Details

Part Number
FDMT1D3N08B
Manufacturer
onsemi
Description
-20 to 20 V, N-Channel MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

164 A
Drain Source Resistance

1.35 milliohm
Drain Source Breakdown Voltage

80 V
Gate Source Voltage

-20 to 20 V
Gate Source Threshold Voltage

4 V
Gate Charge

152 to 260 nC
Power Dissipation

178 W
Temperature operating range

-55 to 150 Degree C
RoHS Compliant

Yes
Package Type

Surface Mount
Package

PQFN-8
Applications

OringFET / Load Switching, Synchronous Rectification, DC-DC Conversion