FDN352AP

Note : Your request will be directed to onsemi.

The FDN352AP from onsemi is a MOSFET with Continous Drain Current -1.3 A, Drain Source Resistance 180 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -2.5 V. Tags: Surface Mount. More details for FDN352AP can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDN352AP
  • Manufacturer
    onsemi
  • Description
    -25 to 25 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.3 A
  • Drain Source Resistance
    180 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -2.5 V
  • Gate Charge
    1.4 to 1.9 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    Power management, Notebook

Technical Documents