FDN86246

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The FDN86246 from onsemi is a MOSFET with Continous Drain Current 1.6 A, Drain Source Resistance 195 to 359 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FDN86246 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDN86246
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 150 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.6 A
  • Drain Source Resistance
    195 to 359 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    1.6 to 5 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SSOT-3
  • Applications
    PD Switch

Technical Documents