FDN86265P

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The FDN86265P from onsemi is a MOSFET with Continous Drain Current -0.8 A, Drain Source Resistance 850 to 2200 milliohm, Drain Source Breakdown Voltage -150 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for FDN86265P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDN86265P
  • Manufacturer
    onsemi
  • Description
    -150 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.8 A
  • Drain Source Resistance
    850 to 2200 milliohm
  • Drain Source Breakdown Voltage
    -150 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    2.9 to 4.1 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    Active Clamp Switch, Load Switch

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