FDP023N08B_F102

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The FDP023N08B_F102 from onsemi is a MOSFET with Continous Drain Current 242 A, Drain Source Resistance 1.96 to 2.35 milliohm, Drain Source Breakdown Voltage 75 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 3.8 V. Tags: Through Hole. More details for FDP023N08B_F102 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDP023N08B_F102
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 75 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    242 A
  • Drain Source Resistance
    1.96 to 2.35 milliohm
  • Drain Source Breakdown Voltage
    75 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 3.8 V
  • Gate Charge
    150 to 195 nC
  • Power Dissipation
    245 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Synchronous Rectification for ATX / Server / Telecom PSU, Battery Protection Circuit, Motor Drives, Uninterruptible Power Supplies, Renewable System

Technical Documents