FDP3651U

Note : Your request will be directed to onsemi.

The FDP3651U from onsemi is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 15 to 37 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3.5 to 5.5 V. Tags: Through Hole. More details for FDP3651U can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDP3651U
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    15 to 37 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3.5 to 5.5 V
  • Gate Charge
    49 to 69 nC
  • Power Dissipation
    255 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Consumer Appliances, Synchronous Rectification, Battery Protection Circuit, Motor Drives, Uninterruptible Power Supplies, Micro Solar Inverters

Technical Documents