FDP3682

Note : Your request will be directed to onsemi.

The FDP3682 from onsemi is a MOSFET with Continous Drain Current 32 A, Drain Source Resistance 32 to 90 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FDP3682 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDP3682
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    32 A
  • Drain Source Resistance
    32 to 90 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    18.5 to 28 nC
  • Power Dissipation
    95 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Consumer Appliances, Synchronous Rectification, Battery Protection Circuit, Motor Drives, Uninterruptible Power Supplies, Micro Solar Inverters

Technical Documents