FDP8896

Note : Your request will be directed to onsemi.

The FDP8896 from onsemi is a MOSFET with Continous Drain Current 92 A, Drain Source Resistance 5 to 9.4 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Through Hole. More details for FDP8896 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDP8896
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    92 A
  • Drain Source Resistance
    5 to 9.4 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    25 to 67 nC
  • Power Dissipation
    80 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    DC/DC Converter

Technical Documents