FDPC8013S

Note : Your request will be directed to onsemi.

The FDPC8013S from onsemi is a MOSFET with Continous Drain Current 13 to 55 A, Drain Source Resistance 1.4 to 9.6 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 3 V. Tags: Surface Mount. More details for FDPC8013S can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDPC8013S
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    13 to 55 A
  • Drain Source Resistance
    1.4 to 9.6 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 3 V
  • Gate Charge
    6 to 44 nC
  • Power Dissipation
    0.8 to 2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Computing, Communications, General Purpose Point of Load

Technical Documents