FDPC8014S

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The FDPC8014S from onsemi is a MOSFET with Continous Drain Current 20 to 110 A, Drain Source Resistance 0.9 to 4.7 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.8 to 2.5 V. Tags: Surface Mount. More details for FDPC8014S can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDPC8014S
  • Manufacturer
    onsemi
  • Description
    -12 to 12 V, 25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    20 to 110 A
  • Drain Source Resistance
    0.9 to 4.7 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.8 to 2.5 V
  • Gate Charge
    11 to 130 nC
  • Power Dissipation
    2.1 to 42 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Computing, Communications, General Purpose Point of Load

Technical Documents