FDPF18N50T

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The FDPF18N50T from onsemi is a MOSFET with Continous Drain Current 18 A, Drain Source Resistance 265 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 5 V. Tags: Through Hole. More details for FDPF18N50T can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDPF18N50T
  • Manufacturer
    onsemi
  • Description
    500 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    265 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    45 to 60 nC
  • Power Dissipation
    38.5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220-3 FullPak
  • Applications
    LCD/LED/PDP TV, Moniter, UPS

Technical Documents