FDS3890

Note : Your request will be directed to onsemi.

The FDS3890 from onsemi is a MOSFET with Continous Drain Current 4.7 A, Drain Source Resistance 44 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDS3890 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDS3890
  • Manufacturer
    onsemi
  • Description
    80 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4.7 A
  • Drain Source Resistance
    44 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    25 to 35 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 175 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8

Technical Documents