FDS86140

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The FDS86140 from onsemi is a MOSFET with Continous Drain Current 11.2 A, Drain Source Resistance 9.8 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDS86140 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDS86140
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11.2 A
  • Drain Source Resistance
    9.8 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    16.5 to 41 nC
  • Power Dissipation
    5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    DC/DC converter, UPS, VRMs

Technical Documents