FDS8858CZ

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The FDS8858CZ from onsemi is a MOSFET with Continous Drain Current -7.3 to 8.6 A, Drain Source Resistance 20.5 milliohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -3 to 3 V. Tags: Surface Mount. More details for FDS8858CZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDS8858CZ
  • Manufacturer
    onsemi
  • Description
    -25 to 25 V, 2 W, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -7.3 to 8.6 A
  • Drain Source Resistance
    20.5 milliohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -3 to 3 V
  • Gate Charge
    17 to 46 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    Inverter, Synchronous Buck

Technical Documents