FQA6N90C-F109

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The FQA6N90C-F109 from onsemi is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 1930 to 2300 milliohm, Drain Source Breakdown Voltage 900 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for FQA6N90C-F109 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQA6N90C-F109
  • Manufacturer
    onsemi
  • Description
    900 V, 30 to 40 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    1930 to 2300 milliohm
  • Drain Source Breakdown Voltage
    900 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    30 to 40 nC
  • Power Dissipation
    198 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-3P-3L

Technical Documents