FQAF13N80

Note : Your request will be directed to onsemi.

The FQAF13N80 from onsemi is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 580 to 750 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for FQAF13N80 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FQAF13N80
  • Manufacturer
    onsemi
  • Description
    800 V, 68 to 88 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    580 to 750 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    68 to 88 nC
  • Power Dissipation
    120 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-3PF-3L

Technical Documents