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FQB19N20C

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FQB19N20C Image

The FQB19N20C from onsemi is a MOSFET with Continous Drain Current 19 A, Drain Source Resistance 140 to 170 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQB19N20C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQB19N20C
  • Manufacturer
    onsemi
  • Description
    200 V, 40.5 to 53 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    19 A
  • Drain Source Resistance
    140 to 170 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    40.5 to 53 nC
  • Power Dissipation
    139 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK

Technical Documents
View details on the manufacturer's website
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