FQB19N20LTM

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The FQB19N20LTM from onsemi is a MOSFET with Continous Drain Current 21 A, Drain Source Resistance 110 to 150 milli-ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for FQB19N20LTM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQB19N20LTM
  • Manufacturer
    onsemi
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    21 A
  • Drain Source Resistance
    110 to 150 milli-ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    27 to 35 nC
  • Power Dissipation
    140 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK

Technical Documents