FQB30N06L

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The FQB30N06L from onsemi is a MOSFET with Continous Drain Current 32 A, Drain Source Resistance 27 to 45 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for FQB30N06L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQB30N06L
  • Manufacturer
    onsemi
  • Description
    60 V, 15 to 20 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    32 A
  • Drain Source Resistance
    27 to 45 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    15 to 20 nC
  • Power Dissipation
    79 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    D2PAK

Technical Documents