FQB5N50C

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The FQB5N50C from onsemi is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 1140 to 1400 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQB5N50C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQB5N50C
  • Manufacturer
    onsemi
  • Description
    500 V, 18 to 24 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    1140 to 1400 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    18 to 24 nC
  • Power Dissipation
    73 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK

Technical Documents