FQB8N60C

Note : Your request will be directed to onsemi.

The FQB8N60C from onsemi is a MOSFET with Continous Drain Current 7.5 A, Drain Source Resistance 1000 to 1200 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FQB8N60C can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FQB8N60C
  • Manufacturer
    onsemi
  • Description
    600 V, 28 to 36 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.5 A
  • Drain Source Resistance
    1000 to 1200 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    28 to 36 nC
  • Power Dissipation
    147 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK

Technical Documents