FQI7N60

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The FQI7N60 from onsemi is a MOSFET with Continous Drain Current 7.4 A, Drain Source Resistance 800 to 1000 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for FQI7N60 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQI7N60
  • Manufacturer
    onsemi
  • Description
    600 V, 29 to 38 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.4 A
  • Drain Source Resistance
    800 to 1000 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    29 to 38 nC
  • Power Dissipation
    142 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    I2PAK

Technical Documents