FQN1N60C

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The FQN1N60C from onsemi is a MOSFET with Continous Drain Current 0.3 A, Drain Source Resistance 9300 to 11500 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FQN1N60C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQN1N60C
  • Manufacturer
    onsemi
  • Description
    600 V, 4.8 to 6.2 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.3 A
  • Drain Source Resistance
    9300 to 11500 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    4.8 to 6.2 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-92

Technical Documents