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FQP17P06

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The FQP17P06 from onsemi is a MOSFET with Continous Drain Current -17 A, Drain Source Resistance 94 to 120 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Through Hole. More details for FQP17P06 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQP17P06
  • Manufacturer
    onsemi
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -17 A
  • Drain Source Resistance
    94 to 120 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    21 to 27 nC
  • Power Dissipation
    79 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Other Audio & Video

Technical Documents
View details on the manufacturer's website
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