FQP17P10

Note : Your request will be directed to onsemi.

The FQP17P10 from onsemi is a MOSFET with Continous Drain Current -16.5 A, Drain Source Resistance 140 to 190 milli-ohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Through Hole. More details for FQP17P10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FQP17P10
  • Manufacturer
    onsemi
  • Description
    -100 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -16.5 A
  • Drain Source Resistance
    140 to 190 milli-ohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    30 to 39 nC
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220-3
  • Applications
    Switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications

Technical Documents