NDS331N

Note : Your request will be directed to onsemi.

The NDS331N from onsemi is a MOSFET with Continous Drain Current 1.3 A, Drain Source Resistance 110 to 400 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.5 to 1 V. Tags: Surface Mount. More details for NDS331N can be seen below.

Product Specifications

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Product Details

  • Part Number
    NDS331N
  • Manufacturer
    onsemi
  • Description
    -8 to 8 V, 20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.3 A
  • Drain Source Resistance
    110 to 400 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.5 to 1 V
  • Gate Charge
    3.5 to 5 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    General Purpose application

Technical Documents