NDT014L

Note : Your request will be directed to onsemi.

The NDT014L from onsemi is a MOSFET with Continous Drain Current -2.8 to 2.8 A, Drain Source Resistance 120 to 360 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 3 V. Tags: Surface Mount. More details for NDT014L can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NDT014L
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.8 to 2.8 A
  • Drain Source Resistance
    120 to 360 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 3 V
  • Gate Charge
    3.6 to 6 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    General Purpose application

Technical Documents