NTB190N65S3HF

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The NTB190N65S3HF from onsemi is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 161 to 190 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for NTB190N65S3HF can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTB190N65S3HF
  • Manufacturer
    onsemi
  • Description
    -30 to 30 V, 650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    161 to 190 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    34 nC
  • Power Dissipation
    162 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Telecom / Server Power Supplies, Industrial Power Supplies, EV Charger, UPS / Solar

Technical Documents