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NTBG040N120M3S

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The NTBG040N120M3S from onsemi is an N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET that has been designed for fast-switching applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of up to 4.4 V, and a

Product Specifications

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Product Details

  • Part Number
    NTBG040N120M3S
  • Manufacturer
    onsemi
  • Description
    1200 V N-Channel Enhancement Mode SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    15.40 x 9.90 x 9.20 mm
  • Number of Channels
    Single
  • Continous Drain Current
    57 A
  • Drain Source Resistance
    54 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 22 V
  • Gate Source Threshold Voltage
    4.4 V
  • Gate Charge
    75 nC
  • Power Dissipation
    263 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Solar Inverters, Electric Vehicle Charging Stations, Uninterruptible Power Supplies (UPS), Energy Storage Systems, Switch Mode Power Supplies (SMPS)

Technical Documents
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