The NTBG040N120M3S from onsemi is an N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET that has been designed for fast-switching applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of up to 4.4 V, and a drain-source on-resistance of less than 54 milli-ohms. This SiC MOSFET has a continuous drain current of up to 57 A and power dissipation of less than 263 W. It utilizes planar technology that works reliably with negative gate voltage drive and turn-off spikes on the gate. This MOSFET offers high-speed switching with low capacitance and ultra-low gate charge. It also utilizes the new M3S technology resulting in low drain-source on-resistance and losses. This RoHS-compliant SiC MOSFET is available in a surface-mount package that measures 15.40 x 9.90 x 9.20 mm and is ideal for solar inverters, electric vehicle charging stations, uninterruptible power supplies (UPS), energy storage systems, switch mode power supplies (SMPS), and other industrial applications.