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NTBG040N120M3S Image

The NTBG040N120M3S from onsemi is an N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET that has been designed for fast-switching applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of up to 4.4 V, and a drain-source on-resistance of less than 54 milli-ohms. This SiC MOSFET has a continuous drain current of up to 57 A and power dissipation of less than 263 W. It utilizes planar technology that works reliably with negative gate voltage drive and turn-off spikes on the gate. This MOSFET offers high-speed switching with low capacitance and ultra-low gate charge. It also utilizes the new M3S technology resulting in low drain-source on-resistance and losses. This RoHS-compliant SiC MOSFET is available in a surface-mount package that measures 15.40 x 9.90 x 9.20 mm and is ideal for solar inverters, electric vehicle charging stations, uninterruptible power supplies (UPS), energy storage systems, switch mode power supplies (SMPS), and other industrial applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    1200 V N-Channel Enhancement Mode SiC MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Dimensions
    15.40 x 9.90 x 9.20 mm
  • Number of Channels
  • Continous Drain Current
    57 A
  • Drain Source Resistance
    54 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 22 V
  • Gate Source Threshold Voltage
    4.4 V
  • Gate Charge
    75 nC
  • Power Dissipation
    263 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Solar Inverters, Electric Vehicle Charging Stations, Uninterruptible Power Supplies (UPS), Energy Storage Systems, Switch Mode Power Supplies (SMPS)

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