NTBL045N065SC1

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NTBL045N065SC1 Image

The NTBL045N065SC1 from onsemi is an N-Channel Enhancement Mode SiC MOSFET. It has a drain-source breakdown voltage of over 650 V, gate threshold voltage of 2.8 V and a drain-source resistance of up to 45 mΩ. This MOSFET has a continuous drain current of less than 73 A and a pulsed drain current of up to 182 A. It has power dissipation of 348 W. This MOSFET is fabricated using Silicon Carbide (SiC) technology that offers superior switching performance and high reliability. It provides system benefits such as higher efficiency, faster operation frequency, increased power density, and reduced EMI. 

This RoHS compliant MOSFET is available as a surface-mount package that measures 9.90 x 11.68 mm and is ideal for Switching Mode Power Supplies (SMPS), solar inverters, Uninterruptable Power Supplies (UPS) and energy storage applications.

Product Specifications

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Product Details

  • Part Number
    NTBL045N065SC1
  • Manufacturer
    onsemi
  • Description
    650 V N-Channel Enhancement Mode SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    9.90 mm x 11.68 mm
  • Number of Channels
    Single
  • Continous Drain Current
    73 A
  • Drain Source Resistance
    33 to 50 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -8 to 22 V
  • Gate Source Threshold Voltage
    1.8 to 4.3 V
  • Gate Charge
    105 nC
  • Power Dissipation
    174 W
  • Temperature operating range
    -55 to 175 degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    H-PSOF8L
  • Applications
    Energy Storage, Solar inverters, Switched mode power supplies, Uninterrupted power supplies

Technical Documents