The NTBL045N065SC1 from onsemi is an N-Channel Enhancement Mode SiC MOSFET. It has a drain-source breakdown voltage of over 650 V, gate threshold voltage of 2.8 V and a drain-source resistance of up to 45 mΩ. This MOSFET has a continuous drain current of less than 73 A and a pulsed drain current of up to 182 A. It has power dissipation of 348 W. This MOSFET is fabricated using Silicon Carbide (SiC) technology that offers superior switching performance and high reliability. It provides system benefits such as higher efficiency, faster operation frequency, increased power density, and reduced EMI.
This RoHS compliant MOSFET is available as a surface-mount package that measures 9.90 x 11.68 mm and is ideal for Switching Mode Power Supplies (SMPS), solar inverters, Uninterruptable Power Supplies (UPS) and energy storage applications.