NTE4151PT1G

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The NTE4151PT1G from onsemi is a MOSFET with Continous Drain Current -0.76 A, Drain Source Resistance 260 to 1000 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -6 to 6 V, Gate Source Threshold Voltage -1.2 to -0.45 V. Tags: Surface Mount. More details for NTE4151PT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTE4151PT1G
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.76 A
  • Drain Source Resistance
    260 to 1000 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -6 to 6 V
  • Gate Source Threshold Voltage
    -1.2 to -0.45 V
  • Gate Charge
    2.1 nC
  • Power Dissipation
    0.313 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-89-3
  • Applications
    High Side Load Switch, DC-DC Conversion, Small Drive Circuits, Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras

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