NTF6P02T3G

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The NTF6P02T3G from onsemi is a MOSFET with Continous Drain Current -10 A, Drain Source Resistance 44 to 70 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.4 V. Tags: Surface Mount. More details for NTF6P02T3G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTF6P02T3G
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -10 A
  • Drain Source Resistance
    44 to 70 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.4 V
  • Gate Charge
    6 to 20 nC
  • Power Dissipation
    8.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    Power Management in Portables and Battery-Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards

Technical Documents