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NTHD4102PT1G

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The NTHD4102PT1G from onsemi is a MOSFET with Continous Drain Current -4.1 A, Drain Source Resistance 64 to 170 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.5 to -0.45 V. Tags: Surface Mount. More details for NTHD4102PT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHD4102PT1G
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4.1 A
  • Drain Source Resistance
    64 to 170 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.5 to -0.45 V
  • Gate Charge
    7.6 to 8.6 nC
  • Power Dissipation
    2.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    ChipFET-8
  • Applications
    Optimized for Battery and Load Management Applications in Portable Equipment such as MP3 Players, Cell Phones, and PDAs, Charge Control in Battery Chargers, Buck and Boost Converters

Technical Documents
View details on the manufacturer's website
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