NTHD4508NT1G

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The NTHD4508NT1G from onsemi is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 60 to 115 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.2 V. Tags: Surface Mount. More details for NTHD4508NT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHD4508NT1G
  • Manufacturer
    onsemi
  • Description
    -12 to 12 V, 20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    60 to 115 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.2 V
  • Gate Charge
    2.6 to 4 nC
  • Power Dissipation
    1.13 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    Chip
  • Applications
    DC-DC Buck/Boost Converters, Battery and Low Side Switching in Portable Equipment Such as MP3 Players, Cell Phones, DSCs and PDAs, Level Shifting

Technical Documents