NTHL120N60S5Z

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NTHL120N60S5Z Image

The NTHL120N60S5Z from onsemi is a MOSFET with Continous Drain Current 28 A, Drain Source Resistance 120 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Through Hole. More details for NTHL120N60S5Z can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTHL120N60S5Z
  • Manufacturer
    onsemi
  • Description
    4 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    28 A
  • Drain Source Resistance
    120 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    40 nC
  • Power Dissipation
    160 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3LD
  • Applications
    Telecom / Server Power Supplies, EV Charger / UPS / Solar / Industrial Power Supplies

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