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NTMFS002N10MCLT1G

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The NTMFS002N10MCLT1G from onsemi is a MOSFET with Continous Drain Current 15 to 175 A, Drain Source Resistance 2.3 to 3.8 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for NTMFS002N10MCLT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTMFS002N10MCLT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 45 to 97 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    15 to 175 A
  • Drain Source Resistance
    2.3 to 3.8 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    45 to 97 nC
  • Power Dissipation
    189 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5
  • Applications
    Synchronous Rectification in USB type C Designs, Switching Power Supplies, Primary MOSFET in DC-DC modules, Reverse Battery Protection

Technical Documents
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