NTMFS0D9N04XLT1G

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The NTMFS0D9N04XLT1G from onsemi is a Single N-channel MOSFET that has been designed for high switching frequency DC−DC conversion and synchronous rectification applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of up to 2.2 V, and a drain-source on-resistance of less than 0.9 milli-ohms. This MOSFET has a continuous drain current of up to 278 A and a power dissipation of less than 136 W. It is designed with a low drain-source on-resistance to minimize conduction loss, ensuring efficient power management. This MOSFET features low reverse recovery charge with soft recovery to minimize ERR loss and voltage spikes during operation. It includes low gate charge and capacitance that reduces driving and switching losses, enhancing overall performance. This RoHS-compliant MOSFET is available in a surface-mount package that measures 6.3 x 5.3 mm.

Product Specifications

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Product Details

  • Part Number
    NTMFS0D9N04XLT1G
  • Manufacturer
    onsemi
  • Description
    40 V Single N-Channel MOSFET for Synchronous Rectification Applications

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    6.3 x 5.3 mm
  • Number of Channels
    Single
  • Continous Drain Current
    278 A
  • Drain Source Resistance
    0.9 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.2 V
  • Gate Charge
    31 nC
  • Power Dissipation
    136 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5
  • Applications
    High Switching Frequency DC-DC Conversion, Synchronous Rectification

Technical Documents