The NTMFS2D5N08XT1G from onsemi is a Single N-channel MOSFET that is ideal for synchronous rectification in DC−DC and AC−DC converters, primary switching in isolated DC−DC converters, and motor drive applications. It has a drain-source breakdown voltage of over 80 V, a gate threshold voltage of up to 3.6 V, and a drain-source on-resistance of less than 2.1 milli-ohms. This MOSFET has a continuous drain current of up to 181 A and a power dissipation of less than 148 W. It integrates a soft recovery body diode with a low reverse recovery charge to support high switching speed. This MOSFET also has a low drain-to-source resistance to minimize conduction losses and ensure higher efficiency. It is designed to reduce driver losses with low gate charge (QG) and capacitance. This RoHS-compliant MOSFET is available in a surface-mount package that measures 4.560 x 4.530 mm.