NTMFS6H801NLT1G

Note : Your request will be directed to onsemi.

The NTMFS6H801NLT1G from onsemi is a MOSFET with Continous Drain Current 160 A, Drain Source Resistance 2.2 to 3.3 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NTMFS6H801NLT1G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTMFS6H801NLT1G
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 90 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    160 A
  • Drain Source Resistance
    2.2 to 3.3 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    90 nC
  • Power Dissipation
    167 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5 (SO-8FL)
  • Applications
    primary mosfet, synchronous rectifier, Motor drive switch

Technical Documents