NTP125N60S5FZ

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The NTP125N60S5FZ from onsemi is a MOSFET with Continous Drain Current 22 A, Drain Source Resistance 125 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4.8 V. Tags: Through Hole. More details for NTP125N60S5FZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTP125N60S5FZ
  • Manufacturer
    onsemi
  • Description
    4.8 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    22 A
  • Drain Source Resistance
    125 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4.8 V
  • Gate Charge
    39 nC
  • Power Dissipation
    156 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220-3
  • Applications
    Telecom / Server Power Supplies, EV Charger / UPS / Solar / Industrial Power Supplies

Technical Documents