NTR4171PT1G

Note : Your request will be directed to onsemi.

The NTR4171PT1G from onsemi is a MOSFET with Continous Drain Current -3.5 A, Drain Source Resistance 50 to 150 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.4 to -0.7 V. Tags: Surface Mount. More details for NTR4171PT1G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NTR4171PT1G
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.5 A
  • Drain Source Resistance
    50 to 150 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.4 to -0.7 V
  • Gate Charge
    7.4 to 15.6 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    Load Switch, Optimized for Battery and Load Management Applications in Portable Equipment like Cell Phones, PDA’s, Media Players

Technical Documents