NTTFD9D0N06HLTWG

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The NTTFD9D0N06HLTWG from onsemi is a MOSFET with Continous Drain Current 38 A, Drain Source Resistance 7.3 to 13 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NTTFD9D0N06HLTWG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTTFD9D0N06HLTWG
  • Manufacturer
    onsemi
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    38 A
  • Drain Source Resistance
    7.3 to 13 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    6.4 to 13.5 nC
  • Power Dissipation
    26 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WQFN-12
  • Applications
    Computing, Communications, General Purpose Point of Load

Technical Documents