NTTFS012N10MD

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NTTFS012N10MD Image

The NTTFS012N10MD from onsemi is a MOSFET with Continous Drain Current 45 A, Drain Source Resistance 14.4 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for NTTFS012N10MD can be seen below.

Product Specifications

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Product Details

  • Part Number
    NTTFS012N10MD
  • Manufacturer
    onsemi
  • Description
    4 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    45 A
  • Drain Source Resistance
    14.4 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    8 to 13 nC
  • Power Dissipation
    62 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-8
  • Applications
    Primary Switch in Isolated DC-DC Converter, Synchronous Rectification (SR) in DC-DC and AC-DC, AC-DC Adapters (USB PD) SR, Load Switch, Hotswap, and ORing Switch, BLDC Motor and Solar Inverter

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